A cheap option for low-power, high-performance designs is the EX256-PTQ100. These devices are perfect for power-sensitive applications due to the anti-fuse technology's inherent low power characteristics and an additional low static power mode. These devices are produced using cutting-edge 0.22 mm CMOS anti-fuse technology, which results in great performance with negligible power loss.
Using 0.22 m design criteria, the EX256-PTQ100 is realized on a high-voltage twin-well CMOS technology. With almost no chip area lost to connection components or routing, the EX256-PTQ100 architecture has a "sea-of-modules" design where the whole floor of the device is covered with a grid of logic modules.
Metal-to-metal programmable anti-fuse connector elements, a Microsemi invention, are used to connect these logic modules together. The anti-fuse connection has an "on" state resistance of 25 and a capacitance of 1.0 fF for low-signal impedance. It is constructed from amorphous silicon, dielectric material, and barrier metals. When programmed, the anti-fuses, which are by default open circuits, create a stable low-impedance connection.
| Specification | Value |
|---|---|
| Number of Logic Elements/Cells | 512 |
| Number of I/O | 81 |
| Number of Gates | 12000 |
| Voltage - Supply | 2.3V ~ 2.7V |
| Mounting Type | Surface Mount |
| Operating Temperature | 0℃ ~ 70℃ (TA) |
| Package / Case | 100-LQFP |
| Supplier Device Package | 100-TQFP (14x14) |
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