RTAX250S-1CG624E offers high performance at densities of up to four million equivalent system gates for space-based applications. Based upon the Microsemi commercial Accelerator devices, RTAX250S-1CG624E has several system-level features such as embedded SRAM (with built-in FIFO control logic), segmentable clocks, chip-wide highway routing, and carry logic.
Featuring SEU-hardened flip-flops that offer the benefits of user-implemented Triple Module Redundancy (TMR) without the associated overhead, the RTAX250S-1CG624E is the second generation of Microsemi’s products for space applications. RTAX250S-1CG624E is manufactured using a 0.15 µm technology at a UMC facility in Taiwan. These devices offer levels of radiation survivability far in excess of typical CMOS devices.
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