RT54SX72S-1CG624B

RT54SX72S-1CG624B Overview

The RT54SX72S-1CG624B is the device created specifically for improved radiation performance. The RT54SX72S-1CG624B is a special product offering for space applications because it has D-type flip-flops that have been SEU-hardened and provide Triple Module Redundancy (TMR) benefits without the added overhead. RT54SX72S-1CG624B offers levels of radiation survivability far beyond that of typical CMOS devices and was produced using 0.25 m technology at the Matsushita (MEC) facility in Japan. The highly successful RT54SX72S-1CG624B sea-of-modules architecture served as the inspiration for RT54SX72S-1CG624B architecture, which was created to enhance upset and total-dose performance in radiation environments. The RT54SX72S-1CG624B makes efficient use of silicon by placing the routing interconnect resources between the three metal layers in the RT54SX32S and the four metal layers in the RT54SX72S.

​This completely eliminates the interconnect resources and routing channels between logic modules that are present in conventional FPGAs. A grid of logic modules covers the entire FPGA's floor in a sea-of-modules architecture, with hardly any chip space being lost to interconnects or routing. To improve its performance in radiation environments, the RT54SX72S-1CG624B architecture adds a number of improvements over the SX-A architecture, including SEU-hardened flip-flops, wider clock lines, and stronger clock drivers.

RT54SX72S-1CG624B Specifications