RTSX32SU-1CQ84EV

RTSX32SU-1CQ84EV Overview

The RTSX32SU-1CQ84EV from Microsemi has been improved to create specifically for improved radiation performance. The RTSX32SU-1CQ84EV is a special product offering for space applications because it includes SEU-hardened D-type flip-flops that provide Triple Module Redundancy (TMR) benefits without the added overhead. The United Microelectronics Corporation (UMC) facility in Taiwan is where RTSX32SU-1CQ84EV is made, and it uses 0.25 m technology to achieve radiation survivability levels far beyond those of typical CMOS devices.

The RTSX32SU-1CQ84EV architecture, which was developed to enhance upset and total-dose performance in radiation environments, was derived from the incredibly successful SX-A sea-of-modules architecture. The RTSX32SU-1CQ84EV efficiently utilizes silicon by placing the routing interconnect resources between the top two metal layers, with the RTSX32SU-1CQ84EV having three layers of metal interconnect and the RTSX32SU-1CQ84EV having four layers of metal interconnect. This completely eliminates the interconnect resources and routing channels between logic modules that are present in conventional FPGAs. A grid of logic modules covers the entire FPGA's floor in a sea-of-modules architecture, with hardly any chip space being lost to interconnects or routing. To improve its performance in radiation environments, the RTSX32SU-1CQ84EV architecture adds a number of improvements over the SX-A architecture, including SEU-hardened flip-flops, wider clock lines, and stronger clock drivers.

RTSX32SU-1CQ84EV Specifications